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Renesas Electronics 6116LA70TDB — Discrete Semiconductors

Renesas 6116LA70TDB SRAM, 16Kbit, 70ns, 24-CDIP

MPN6116LA70TDB
End of Life

Renesas Electronics 6116LA70TDB asynchronous SRAM, 16Kbit (2K x 8), 70 ns access time, 4.5V-5.5V supply, -55°C to +125°C, 24-CDIP ceramic DIP, through-hole, Bulk.

$12.0Ref. price · indicative, final on quote
Packaging24-CDIP (0.300", 7.62mm)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

6116LA70TDB specifications
ParameterValue
Memory typeVolatile
MountingThrough Hole
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-55°C ~ 125°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time70 ns
Memory size16Kbit
Memory formatSRAM
Case24-CDIP (0.300\", 7.62mm)
Memory organization2K x 8
Write cycle time - word, page70ns

Product details

70 ns access and 5V parallel interface

The 6116LA70TDB: With a 70 ns access time and matching 70 ns write cycle time (word/page mode), this SRAM presents a straightforward parallel interface to any 8-bit bus running at sub-14 MHz cycle rates. The 2K x 8 organization maps directly to an 8-bit data bus with 11 address lines — no address multiplexing or refresh overhead, unlike DRAM. Being asynchronous, it requires no clock and responds to address transitions within the access time window.

Ceramic DIP for high-reliability and wide-temperature deployment

The 24-CDIP package is a hermetic ceramic dual-in-line with a 0.300" row spacing and 0.100" pin pitch, suitable for through-hole soldering or socket mounting. This temperature grade and package type target avionics, missile guidance, satellite, and downhole instrumentation — environments where commercial or industrial plastic packages would fail under thermal cycling or outgassing constraints.