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Renesas Electronics 1SS88TD-E

1SS88TD-E Diode, 250 V 200 mA DO-35, Active

MPN1SS88TD-E
End of Life

1SS88TD-E, switching diode, 250 V reverse, 200 mA forward, 100 ns trr, DO-35 axial, through-hole, ROHS3 compliant.

$0.2Ref. price · indicative, final on quote
Renesas Electronics 1SS88TD-E datasheet (PDF)
PackagingDO-204AH, DO-35, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1SS88TD-E specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)250 V
Voltage - forward (Vf) (Max) @ if1 V @ 100 mA
Current - reverse leakage @ vr200 nA @ 250 V
Current - average rectified200mA
Operating temperature - junction175°C
PackageBulk
CaseDO-204AH, DO-35, Axial
Capacitance @ vr,1.5pF @ 0V, 1MHz
Reverse recovery time100 ns

Product details

100 ns recovery — fast enough for most line-frequency and low-speed switching

The 1SS88TD-E: Reverse recovery time is 100 ns, which is adequate for 50/60 Hz rectification, relay suppression, and general-purpose switching up to about 100 kHz. It will not serve a high-efficiency flyback converter running at 500 kHz — for that you would look at a fast-recovery or ultrafast diode in the same voltage class.

Low capacitance, high leakage — the trade-off at 250 V

Junction capacitance is 1.5 pF at 0 V bias. Reverse leakage is 200 nA at 250 V.

Active production, no obsolescence worry

ROHS3 compliant.

Frequently asked questions

Can I use 1SS88TD-E as a replacement for 1N4148?

Not directly — the 1SS88TD-E is rated for 250 V reverse vs 100 V for the 1N4148, but the forward voltage is 1 V at 100 mA (higher than the 1N4148's 0.7 V typical), and the recovery time is 100 ns vs about 4 ns. In a 5 V logic-level clamp the 1N4148 is the better fit; in a 150 V relay snubber the 1SS88TD-E is the right part.