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Renesas Electronics Corporation AT25DF041B-MHN-Y — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25DF041B-MHN-Y

MPNAT25DF041B-MHN-Y
Active
$1.1452Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

AT25DF041B-MHN-Y Technical Specifications
ParameterValue
Memory typeNon-Volatile
Mounting typeSurface Mount
Voltage1.65V ~ 3.6V
Frequency104 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TC)
PackageTray
TechnologyFLASH
Memory size4Mbit
Memory formatFLASH
Case8-UDFN Exposed Pad
Memory organization512K x 8
Write cycle time - word, page8µs, 2.5ms