Renesas Electronics Corporation 2SK4150TZ-E
MPN2SK4150TZ-E
Obsolete
$1.6900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4V |
| Current - continuous drain (Id) @ 25°C | 400mA (Ta) |
| Power dissipation | 750mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Rds on (Max) @ id, vgs | 5.7Ohm @ 200mA, 4V |
| Gate charge (Qg) (Max) @ vgs | 3.7 nC @ 4 V |
| Input capacitance (Ciss) (Max) @ vds | 80 pF @ 25 V |