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Renesas Electronics Corporation 2SK3659-AZ — Discrete Semiconductors

Renesas Electronics Corporation 2SK3659-AZ

MPN2SK3659-AZ
Obsolete
$1.5200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3659-AZ specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage20 V
Current - continuous drain (Id) @ 25°C65A (Tc)
PackageBulk
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Isolated Tab
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs5.7mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 10 V