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Renesas Electronics Corporation 2SK3482-AZ — Discrete Semiconductors

Renesas Electronics Corporation 2SK3482-AZ

MPN2SK3482-AZ
Last Buy
$1.0000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3482-AZ specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C36A (Ta)
Power dissipation1W (Ta), 50W (Tc)
Operating temperature150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Rds on (Max) @ id, vgs33mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3600 pF @ 10 V