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Renesas Electronics Corporation 2SK3481-AZ — Discrete Semiconductors

Renesas Electronics Corporation 2SK3481-AZ

MPN2SK3481-AZ
Obsolete
$1.9200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3481-AZ specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation1.5W (Ta), 56W (Tc)
Operating temperature150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Rds on (Max) @ id, vgs50mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs48 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2300 pF @ 10 V