Renesas Electronics Corporation 2SK3430-Z-E1-AZ
MPN2SK3430-Z-E1-AZ
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 1.5W (Ta), 84W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Rds on (Max) @ id, vgs | 7.3mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 50 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2800 pF @ 10 V |