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Renesas Electronics Corporation 2SK2315TYTR-E — Discrete Semiconductors

Renesas Electronics Corporation 2SK2315TYTR-E

MPN2SK2315TYTR-E
Last Buy
$0.7500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK2315TYTR-E specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)3V, 4V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation1W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-243AA
Rds on (Max) @ id, vgs450mOhm @ 1A, 4V
Input capacitance (Ciss) (Max) @ vds173 pF @ 10 V