2SK1835-E

Renesas Electronics Corporation

MOSFET N-CH 1500V 4A TO3P

Renesas Electronics Corporation 2SK1835-E
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Technical specifications

2SK1835-E specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1500 V
Drive voltage (Max rds on, min rds on)15V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power dissipation125W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Rds on (Max) @ id, vgs7Ohm @ 2A, 15V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 10 V
2SK1835-E
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