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Renesas Electronics Corporation 2SK1342-E — Discrete Semiconductors

Renesas Electronics Corporation 2SK1342-E

MPN2SK1342-E
Active
$3.4000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK1342-E specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Ta)
Power dissipation100W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Rds on (Max) @ id, vgs1.6Ohm @ 4A, 10V
Input capacitance (Ciss) (Max) @ vds1730 pF @ 10 V