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Renesas Electronics Corporation 2SK1058-E — Discrete Semiconductors

Renesas Electronics Corporation 2SK1058-E

MPN2SK1058-E
Active
$3.1400Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2SK1058-E Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage160 V
Current - continuous drain (Id) @ 25°C7A (Ta)
Power dissipation100W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Input capacitance (Ciss) (Max) @ vds600 pF @ 10 V