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Renesas Electronics Corporation 2SK1058-E — Discrete Semiconductors

Renesas Electronics Corporation 2SK1058-E

MPN2SK1058-E
Active
$3.1400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK1058-E specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage160 V
Current - continuous drain (Id) @ 25°C7A (Ta)
Power dissipation100W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Input capacitance (Ciss) (Max) @ vds600 pF @ 10 V