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Renesas Electronics America Inc 2SK3479-Z-E1-AZ — Discrete Semiconductors

Renesas Electronics America Inc 2SK3479-Z-E1-AZ

MPN2SK3479-Z-E1-AZ
Last Buy
$2.0266Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3479-Z-E1-AZ specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Current - continuous drain (Id) @ 25°C83A (Tc)
Power dissipation1.5W (Ta), 125W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds on (Max) @ id, vgs11mOhm @ 42A, 10V
Gate charge (Qg) (Max) @ vgs210 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11000 pF @ 10 V