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Renesas Electronics America Inc 2SK2729-E — Discrete Semiconductors

Renesas Electronics America Inc 2SK2729-E

MPN2SK2729-E
Active

MOSFET N-CH 500V 20A TO3P

$4.7700Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2SK2729-E Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage500 V
Current - continuous drain (Id) @ 25°C20A (Ta)
Power dissipation150W (Ta)
Operating temperature150°C
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id3.5V @ 1mA
Rds on (Max) @ id, vgs290mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3300 pF @ 10 V