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Renesas Electronics America Inc 2SK2729-E — Discrete Semiconductors

Renesas Electronics America Inc 2SK2729-E

MPN2SK2729-E
Active

MOSFET N-CH 500V 20A TO3P

$4.7700Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK2729-E specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Current - continuous drain (Id) @ 25°C20A (Ta)
Power dissipation150W (Ta)
Operating temperature150°C
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id3.5V @ 1mA
Rds on (Max) @ id, vgs290mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3300 pF @ 10 V