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Renesas Electronics America Inc 2SK1340-E — Discrete Semiconductors

Renesas Electronics America Inc 2SK1340-E

MPN2SK1340-E
Active
$133.2500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK1340-E specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Ta)
Power dissipation100W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Rds on (Max) @ id, vgs4Ohm @ 3A, 10V
Input capacitance (Ciss) (Max) @ vds740 pF @ 10 V