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Renesas Electronics America Inc 2SC1213C-E — Discrete Semiconductors

Renesas Electronics America Inc 2SC1213C-E

MPN2SC1213C-E
Active
$0.2400Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2SC1213C-E Technical Specifications
ParameterValue
Mounting typeThrough Hole
Transistor typeNPN
Voltage - collector emitter breakdown35 V
Current - collector (Ic)500 mA
Current - collector cutoff500nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 10mA, 3V
Power - max400 mW
Operating temperature150°C(TJ)
PackageBulk
CaseTO-226-3, TO-92-3 (TO-226AA)
Vce saturation (Max) @ ib, ic600mV @ 15mA, 150mA