onsemi IRF5 Series

2 variants · onsemiAll Discrete Semiconductors →

About the onsemi IRF5 Series

The onsemi IRF5 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-220-3, drain to source voltage of 100 V and drive voltage (Max rds on, min rds on) of 10V. Variants differ by current - continuous drain (Id) @ 25°C, gate charge (Qg) (Max) @ vgs and input capacitance (Ciss) (Max) @ vds, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. Listed onsemi IRF5 Series part numbers are obsolete or end-of-life — we specialise in sourcing discontinued and hard-to-find onsemi IRF5 Series components.

Select a variant by

Current - continuous drain (Id) @ 25°C: 28A (Tc) · 33A (Tc)
Gate charge (Qg) (Max) @ vgs: 78 nC @ 10 V · 79 nC @ 20 V
Input capacitance (Ciss) (Max) @ vds: 1220 pF @ 25 V · 1710 pF @ 25 V
Power dissipation: 107W (Tc) · 120W (Tc)
Rds on (Max) @ id, vgs: 40mOhm @ 33A, 10V · 52mOhm @ 14A, 10V
Vgs: - · ±20V

Shared specifications

Case: TO-220-3
Drain to source voltage: 100 V
Drive voltage (Max rds on, min rds on): 10V
FET feature: -
FET type: N-Channel
Mounting: Through Hole
Operating temperature: -55°C~175°C(TJ)
Package: Tube
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ id: 4V @ 250µA

Variant comparison

Parameter	IRF540A	IRF540N_R4942
Current - continuous drain (Id) @ 25°C	28A (Tc)	33A (Tc)
Gate charge (Qg) (Max) @ vgs	78 nC @ 10 V	79 nC @ 20 V
Input capacitance (Ciss) (Max) @ vds	1710 pF @ 25 V	1220 pF @ 25 V
Power dissipation	107W (Tc)	120W (Tc)
Rds on (Max) @ id, vgs	52mOhm @ 14A, 10V	40mOhm @ 33A, 10V
Vgs	-	±20V

Request a quote on any onsemi IRF5 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.