Skip to main content
Fairchild Semiconductor SI4463DY — Discrete Semiconductors

Fairchild Semiconductor SI4463DY

MPNSI4463DY
Active

P-CHANNEL MOSFET

$0.7100Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI4463DY Technical Specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C11.5A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 11.5A, 4.5V
Gate charge (Qg) (Max) @ vgs60 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds4481 pF @ 10 V