Skip to main content
onsemi NTMFS6H836NLT1G — Discrete Semiconductors

onsemi NTMFS6H836NLT1G

MPNNTMFS6H836NLT1G
Active

MOSFET N-CH 80V 16A/77A 5DFN

$1.4500Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS6H836NLT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16A (Ta), 77A (Tc)
Power dissipation3.7W (Ta), 89W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2V @ 95µA
Rds on (Max) @ id, vgs6.2mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1950 pF @ 40 V