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onsemi NTMFS5C612NT1G-TE — Discrete Semiconductors

onsemi NTMFS5C612NT1G-TE

MPNNTMFS5C612NT1G-TE
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MOSFET N-CH 60V 35A/230A 5DFN

$5.5500Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS5C612NT1G-TE specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Current - continuous drain (Id) @ 25°C35A (Ta), 230A (Tc)
Power dissipation3.8W (Ta), 170W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.6mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs60.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4830 pF @ 25 V