Skip to main content
onsemi NTMFS4C028NT1G — Discrete Semiconductors

onsemi NTMFS4C028NT1G

MPNNTMFS4C028NT1G
Active

MOSFET N-CH 30V 16.4A/52A 5DFN

$0.9500Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

NTMFS4C028NT1G Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16.4A (Ta), 52A (Tc)
Power dissipation2.51W (Ta), 25.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs4.73mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs22.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1252 pF @ 15 V