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onsemi NTMFS3D6N10MCLT1G — Discrete Semiconductors

onsemi NTMFS3D6N10MCLT1G

MPNNTMFS3D6N10MCLT1G
Active

MOSFET N-CH 100V 19.5A/131A 5DFN

$2.6800Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS3D6N10MCLT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C19.5A (Ta), 131A (Tc)
Power dissipation3W (Ta), 136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id3V @ 270µA
Rds on (Max) @ id, vgs3.6mOhm @ 48A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4411 pF @ 50 V