NTMFS1D7N03CGT1G

onsemi

MOSFET, POWER, 30V N-CHANNEL, SO

onsemi NTMFS1D7N03CGT1G
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[IN STOCK] In Stock: 7 pcs
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMFS1D7N03CGT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Ta), 170A (Tc)
Power dissipation3.8W (Ta), 87W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 90µA
Rds on (Max) @ id, vgs1.74mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs48 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3780 pF @ 15 V
NTMFS1D7N03CGT1G
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