NTMFS002P03P8ZT1G

onsemi

MOSFET, POWER -30V P-CHANNEL, SO

onsemi NTMFS002P03P8ZT1G
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMFS002P03P8ZT1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C40.2A (Ta), 263A (Tc)
Power dissipation3.3W (Ta), 138.9W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs1.4mOhm @ 23A, 10V
Gate charge (Qg) (Max) @ vgs217 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds14950 pF @ 15 V
NTMFS002P03P8ZT1G
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