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onsemi FDMS3669S — Discrete Semiconductors

onsemi FDMS3669S

MPNFDMS3669S
Active

MOSFET 2N-CH 30V 13A/18A POWER56

$1.9100Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

FDMS3669S Technical Specifications
ParameterValue
SeriesPowerTrench®
FET type2 N-Channel (Dual) Asymmetrical
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C13A, 18A
Power - max1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-PowerTDFN
Vgs(th) (Max) @ id2.7V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs24nC @ 10V
Input capacitance (Ciss) (Max) @ vds1605pF @ 15V