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onsemi FDMS3669S — Discrete Semiconductors

onsemi FDMS3669S

MPNFDMS3669S
Active

MOSFET 2N-CH 30V 13A/18A POWER56

$1.9100Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS3669S specifications
ParameterValue
SeriesPowerTrench®
FET type2 N-Channel (Dual) Asymmetrical
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C13A, 18A
Power - max1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-PowerTDFN
Vgs(th) (Max) @ id2.7V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs24nC @ 10V
Input capacitance (Ciss) (Max) @ vds1605pF @ 15V