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onsemi FDD850N10L — Discrete Semiconductors

onsemi FDD850N10L

MPNFDD850N10L
Active

MOSFET N-CH 100V 15.7A DPAK

$1.2200Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

FDD850N10L Technical Specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C15.7A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs28.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1465 pF @ 25 V