FDC6561AN

onsemi · PowerTrench® Series

MOSFET 2N-CH 30V 2.5A SSOT6

onsemi FDC6561AN
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDC6561AN specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C2.5A
Power - max700mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs95mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs3.2nC @ 5V
Input capacitance (Ciss) (Max) @ vds220pF @ 15V
FDC6561AN
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