Skip to main content
onsemi FDC6561AN — Discrete Semiconductors

onsemi FDC6561AN

MPNFDC6561AN
Active

MOSFET 2N-CH 30V 2.5A SSOT6

$0.6600Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

FDC6561AN Technical Specifications
ParameterValue
SeriesPowerTrench®
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C2.5A
Power - max700mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs95mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs3.2nC @ 5V
Input capacitance (Ciss) (Max) @ vds220pF @ 15V