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onsemi FDC602P — Discrete Semiconductors

onsemi FDC602P

MPNFDC602P
Active

MOSFET P-CH 20V 5.5A SUPERSOT6

$0.6100Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

FDC602P Technical Specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C5.5A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 5.5A, 4.5V
Gate charge (Qg) (Max) @ vgs20 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1456 pF @ 10 V