NXP Semiconductors PMN4 Series

2 variants · NXP Semiconductors

About the NXP Semiconductors PMN4 Series

The NXP Semiconductors PMN4 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of SC-74, SOT-457, mounting of Surface Mount and package of Bulk. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and FET type, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed NXP Semiconductors PMN4 Series part numbers are active and orderable.

Select a variant by

Current - continuous drain (Id) @ 25°C: 4.7A (Ta) · 5.2A (Tc)
Drain to source voltage: 20 V · 30 V
FET type: N-Channel · P-Channel
Gate charge (Qg) (Max) @ vgs: 6.1 nC @ 4.5 V · 23 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds: 495 pF @ 25 V · 1820 pF @ 10 V
Operating temperature: -55°C ~ 150°C (TJ) · 150°C (TJ)
Power dissipation: 1.75W (Tc) · 500mW (Ta), 8.33W (Tc)
Rds on (Max) @ id, vgs: 40mOhm @ 3A, 10V · 43mOhm @ 3A, 4.5V

Shared specifications

Case: SC-74, SOT-457
Mounting: Surface Mount
Package: Bulk
Technology: MOSFET (Metal Oxide)

Variant comparison

Parameter	PMN45EN,135	PMN40UPEA115
Current - continuous drain (Id) @ 25°C	5.2A (Tc)	4.7A (Ta)
Drain to source voltage	30 V	20 V
FET type	N-Channel	P-Channel
Gate charge (Qg) (Max) @ vgs	6.1 nC @ 4.5 V	23 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds	495 pF @ 25 V	1820 pF @ 10 V
Operating temperature	150°C (TJ)	-55°C ~ 150°C (TJ)
Power dissipation	1.75W (Tc)	500mW (Ta), 8.33W (Tc)
Rds on (Max) @ id, vgs	40mOhm @ 3A, 10V	43mOhm @ 3A, 4.5V

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