NXP Semiconductors PHB1 Series

2 variants · NXP Semiconductors

About the NXP Semiconductors PHB1 Series

The NXP Semiconductors PHB1 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, drive voltage (Max rds on, min rds on) of 10V and FET type of N-Channel. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and gate charge (Qg) (Max) @ vgs, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed NXP Semiconductors PHB1 Series part numbers are active and orderable.

Select a variant by

Current - continuous drain (Id) @ 25°C: 18A (Tc) · 75A (Tc)
Drain to source voltage: 75 V · 100 V
Gate charge (Qg) (Max) @ vgs: 21 nC @ 10 V · 113.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 633 pF @ 25 V · 4860 pF @ 25 V
Power dissipation: 79W (Tc) · 230W (Tc)
Rds on (Max) @ id, vgs: 9mOhm @ 25A, 10V · 90mOhm @ 9A, 10V

Shared specifications

Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive voltage (Max rds on, min rds on): 10V
FET type: N-Channel
Mounting: Surface Mount
Operating temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Technology: MOSFET (Metal Oxide)
Vgs: ±20V
Vgs(th) (Max) @ id: 4V @ 1mA

Variant comparison

Parameter	PHB110NQ08T,118	PHB18NQ10T,118
Current - continuous drain (Id) @ 25°C	75A (Tc)	18A (Tc)
Drain to source voltage	75 V	100 V
Gate charge (Qg) (Max) @ vgs	113.1 nC @ 10 V	21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	4860 pF @ 25 V	633 pF @ 25 V
Power dissipation	230W (Tc)	79W (Tc)
Rds on (Max) @ id, vgs	9mOhm @ 25A, 10V	90mOhm @ 9A, 10V

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