PN2222A~6412
NXP USA Inc. PN2222A,412
MPNPN2222A,412
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 40 V |
| Current - collector (Ic) | 600 mA |
| Current - collector cutoff | 10nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 100 @ 150mA, 10V |
| Power - max | 500 mW |
| Frequency - transition | 300MHz |
| Operating temperature | 150°C(TJ) |
| Package | Bulk |
| Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Vce saturation (Max) @ ib, ic | 1V @ 50mA, 500mA |