NXP USA Inc. PMV40UN,215
MPNPMV40UN,215
Obsolete
$0.4700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 4.9A (Tc) |
| Power dissipation | 1.9W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 700mV @ 1mA (Typ) |
| Rds on (Max) @ id, vgs | 47mOhm @ 2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 9.3 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 445 pF @ 30 V |