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NXP USA Inc. PMV30XN,215 — Discrete Semiconductors

NXP USA Inc. PMV30XN,215

MPNPMV30XN,215
Obsolete
$0.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMV30XN,215 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C3.2A (Ta)
Power dissipation380mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 3.2A, 4.5V
Gate charge (Qg) (Max) @ vgs7.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds420 pF @ 15 V