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NXP USA Inc. PMV185XN,215 — Discrete Semiconductors

NXP USA Inc. PMV185XN,215

MPNPMV185XN,215
Obsolete
$0.4100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMV185XN,215 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C1.1A (Ta)
Power dissipation325mW (Ta), 1.275W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs250mOhm @ 1.1A, 4.5V
Gate charge (Qg) (Max) @ vgs1.3 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds76 pF @ 15 V