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NXP USA Inc. PMEG6020EPA115 — Discrete Semiconductors

NXP USA Inc. PMEG6020EPA115

MPNPMEG6020EPA115
Active
$0.5500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMEG6020EPA115 specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)60 V
Voltage - forward (Vf) (Max) @ if575 mV @ 2 A
Current - reverse leakage @ vr250 µA @ 60 V
Current - average rectified2A
Operating temperature - junction150°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
Case3-PowerUDFN
Capacitance @ vr,250pF @ 1V, 1MHz
Reverse recovery time78 ns