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NXP USA Inc. PDTC323TK,115 — Discrete Semiconductors

NXP USA Inc. PDTC323TK,115

MPNPDTC323TK,115
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTC323TK,115 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown15 V
Current - collector (Ic)500 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce100 @ 50mA, 5V
Power - max250 mW
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)2.2 kOhms
Vce saturation (Max) @ ib, ic80mV @ 2.5mA, 50mA