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NXP USA Inc. PDTC123JE,115 — Discrete Semiconductors

NXP USA Inc. PDTC123JE,115

MPNPDTC123JE,115
Obsolete
$0.1900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTC123JE,115 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce100 @ 10mA, 5V
Power - max150 mW
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic100mV @ 250µA, 5mA