NXP USA Inc. PDTC123EK,115
MPNPDTC123EK,115
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 1µA |
| DC current gain (hFE) (Min) @ ic, vce | 30 @ 20mA, 5V |
| Power - max | 250 mW |
| Package | Tape & Reel (TR) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Resistor - base (R1) | 2.2 kOhms |
| Resistor - emitter base (R2) | 2.2 kOhms |
| Vce saturation (Max) @ ib, ic | 150mV @ 500µA, 10mA |