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NXP USA Inc. PDTC115EEF,115 — Discrete Semiconductors

NXP USA Inc. PDTC115EEF,115

MPNPDTC115EEF,115
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTC115EEF,115 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)20 mA
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce80 @ 5mA, 5V
Power - max250 mW
PackageTape & Reel (TR) Cut Tape (CT)
ManufacturerNXP USA Inc.
CaseSC-89, SOT-490
Resistor - base (R1)100 kOhms
Resistor - emitter base (R2)100 kOhms
Vce saturation (Max) @ ib, ic150mV @ 250µA, 5mA