Skip to main content
NXP USA Inc. PDTC114TK,115 — Discrete Semiconductors

NXP USA Inc. PDTC114TK,115

MPNPDTC114TK,115
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTC114TK,115 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce200 @ 1mA, 5V
Power - max250 mW
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Vce saturation (Max) @ ib, ic150mV @ 500µA, 10mA