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NXP USA Inc. PDTC114TEF,115 — Discrete Semiconductors

NXP USA Inc. PDTC114TEF,115

MPNPDTC114TEF,115
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTC114TEF,115 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce200 @ 1mA, 5V
Power - max150 mW
PackageTape & Reel (TR) Cut Tape (CT)
CaseSC-89, SOT-490
Resistor - base (R1)10 kOhms
Vce saturation (Max) @ ib, ic150mV @ 500µA, 10mA