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NXP USA Inc. PDTA143TE,115 — Discrete Semiconductors

NXP USA Inc. PDTA143TE,115

MPNPDTA143TE,115
Obsolete
$0.3600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTA143TE,115 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 1mA, 5V
Power - max150 mW
PackageTape & Reel (TR) Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic150mV @ 250µA, 5mA