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NXP USA Inc. PDTA143EE,115 — Discrete Semiconductors

NXP USA Inc. PDTA143EE,115

MPNPDTA143EE,115
Obsolete
$0.0200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTA143EE,115 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce30 @ 10mA, 5V
Power - max150 mW
PackageTape & Reel (TR)
CaseSC-75, SOT-416
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic150mV @ 500µA, 10mA