NXP USA Inc. PDTA113ES,126
MPNPDTA113ES,126
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | PNP - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 1µA |
| DC current gain (hFE) (Min) @ ic, vce | 30 @ 40mA, 5V |
| Power - max | 500 mW |
| Package | Tape & Box (TB) |
| Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Resistor - base (R1) | 1 kOhms |
| Resistor - emitter base (R2) | 1 kOhms |
| Vce saturation (Max) @ ib, ic | 150mV @ 1.5mA, 30mA |