Skip to main content
NXP USA Inc. BC856T,115 — Discrete Semiconductors

NXP USA Inc. BC856T,115

MPNBC856T,115
Obsolete
$0.0200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC856T,115 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown65 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce125 @ 2mA, 5V
Power - max150 mW
Frequency - transition100MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
CaseSC-75, SOT-416
Vce saturation (Max) @ ib, ic400mV @ 5mA, 100mA