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NXP USA Inc. BAT54C/DG,215 — Discrete Semiconductors

NXP USA Inc. BAT54C/DG,215

MPNBAT54C/DG,215
Active
$0.1500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAT54C/DG,215 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, BAT54
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if800 mV @ 100 mA
Current - reverse leakage @ vr2 µA @ 25 V
Current - average rectified (Io) (per diode)200mA (DC)
Operating temperature - junction150°C(Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Diode configuration1 Pair Common Cathode
Reverse recovery time5 ns