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Nexperia USA Inc. PSMN7R6-100BSEJ

Nexperia USA Inc. PSMN7R6-100BSEJ

MPNPSMN7R6-100BSEJ
Active

MOSFET N-CH 100V 75A D2PAK

$3.0Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PSMN7R6-100BSEJ specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tj)
Power dissipation296W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs7.6mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs128 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7110 pF @ 50 V