Nexperia USA Inc. PSMN3R9-100YSFX
MPNPSMN3R9-100YSFX
Active
MOSFET N-CH 100V 120A LFPAK56
$2.93Ref. price · indicative, final on quote
PackagingSOT-1023, 4-LFPAK
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 7V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Ta) |
| Power dissipation | 245W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-1023, 4-LFPAK |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 4.3mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 111 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7360 pF @ 50 V |