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Nexperia USA Inc. PSMN3R0-30YLDX

Nexperia USA Inc. PSMN3R0-30YLDX

MPNPSMN3R0-30YLDX
Active

MOSFET N-CH 30V 100A LFPAK56

$1.01Ref. price · indicative, final on quote
PackagingSC-100, SOT-669
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PSMN3R0-30YLDX specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation91W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-100, SOT-669
Vgs(th) (Max) @ id2.2V @ 1mA
Rds on (Max) @ id, vgs3.1mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs46.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2939 pF @ 15 V