Nexperia USA Inc. PSMN1R7-40YLDX
MPNPSMN1R7-40YLDX
Active
MOSFET N-CH 40V 200A LFPAK56
$2.03Ref. price · indicative, final on quote
PackagingSC-100, SOT-669
RoHSROHS3 Compliant
SeriesTrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Ta) |
| Power dissipation | 194W (Ta) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Schottky Diode (Body) |
| Case | SC-100, SOT-669 |
| Vgs(th) (Max) @ id | 2.05V @ 1mA |
| Rds on (Max) @ id, vgs | 1.8mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 109 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7966 pF @ 20 V |